12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP

Shop the best quality 12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP at our factory. We specialize in producing high-grade products for various applications.

Request a Quote
  • 12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP
  • 12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP
  • 12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP

PRODUCTS DETAILS

At present, sapphire has two main uses, one is the substrate material, which is mainly LED substrate material, the other is the watch dial, aviation, aerospace, special manufacturing window material. Although silicon carbide, silicon and gallium nitride are also available as substrates for leds in addition to sapphire, mass production is still not possible due to cost and some unresolved technical bottlenecks. Sapphire substrate through the technical development in recent years, its lattice matching, electrical conductivity, mechanical properties, thermal conductivity and other properties have been greatly improved and promoted, cost-effective advantage is significant, so sapphire has become the most mature and stable substrate material in the LED industry, has been widely used in the market, the market share as high as 90%.
Orientation C-plane<0001> +/- 1 deg.
Diameter 300.0 +/-0.25 mm
Thickness 1.0 +/-25um
Notch Notch or Flat
TTV <50um
BOW <50um
Edges Protactive chamfer
Front side – polished 80/50 
Laser mark None
Packaging Single wafer carrier box
Front side Epi ready polished (Ra <0,3nm) 
Back side Epi ready polished (Ra <0,3nm) 
1. Sapphire substrate surfaces have an extremely low particle count, with fewer than 50 particles 0.3 microns or larger per 2 inches in the 2 to 8 inch size range, and major metals (K, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn) below 2E10/cm2. The 12-inch base material is also expected to achieve this grade. 2. Can be used as a carrier wafer for the 12-inch semiconductor manufacturing process (in-device transport pallets) and as a substrate for bonding. 3. Can control the shape of concave and convex surface. Material: High purity single crystal Al2O3, sapphire wafer. LED quality, no bubbles, cracks, twins, lineage, no color..etc.

Hot Products

150mm 200mm 6inch 8inch  GaN on Silicon Epi-layer wafer Gallium nitride epitaxial wafer

150mm 200mm 6inch 8inch GaN on Silicon Epi-layer wafer Gallium nitride epitaxial wafer

4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Research grade

4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Research grade

100mm 4inch GaN on Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

100mm 4inch GaN on Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade

8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade

3inch 4 inch 6inch LiNbO3 Wafer Substrate Single crystal material

3inch 4 inch 6inch LiNbO3 Wafer Substrate Single crystal material

4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm

4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm

4inch 6inch Lithium niobate single crystal film LNOI wafer

4inch 6inch Lithium niobate single crystal film LNOI wafer

KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP

12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP

2 inch 50.8mm Thickness 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-plane R-plane A-plane

2 inch 50.8mm Thickness 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-plane R-plane A-plane

Contact us

Please feel free to give your inquiry in the form below We will reply you in 24 hours