● Growth substrate for III-V and II-VI compounds. ● Electronics and optoelectronics. ● IR applications. ● Silicon On Sapphire Integrated Circuit(SOS). ● Radio Frequency Integrated Circuit(RFIC). In LED production, sapphire wafers are used as a substrate for the growth of gallium nitride (GaN) crystals, which emit light when an electric current is applied. Sapphire is an ideal substrate material for GaN growth because it has a similar crystal structure and thermal expansion coefficient to GaN, which minimizes defects and improves crystal quality. In optics, sapphire wafers are used as windows and lenses in high-pressure and high-temperature environments, as well as in infrared imaging systems, because of their high transparency and hardness.

Item	4-inch C-plane(0001) 650μm Sapphire Wafers
Crystal Materials	99,999%, High Purity, Monocrystalline Al2O3
Grade	Prime, Epi-Ready
Surface Orientation	C-plane(0001)
	C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter	100.0 mm +/- 0.1 mm
Thickness	650 μm +/- 25 μm
Primary Flat Orientation	A-plane(11-20) +/- 0.2°
Primary Flat Length	30.0 mm +/- 1.0 mm
Single Side Polished	Front Surface	Epi-polished, Ra < 0.2 nm (by AFM)
(SSP)	Back Surface	Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished	Front Surface	Epi-polished, Ra < 0.2 nm (by AFM)
(DSP)	Back Surface	Epi-polished, Ra < 0.2 nm (by AFM)
TTV	< 20 μm
BOW	< 20 μm
WARP	< 20 μm
Cleaning / Packaging	Class 100 cleanroom cleaning and vacuum packaging,
	25 pieces in one cassette packaging or single piece packaging.

Generally speaking, we provide the package by 25pcs cassette box; we also can packed by single wafer container under 100 grade cleaning room according to the client's requirement.