Due to its unique physical and electronic properties, 200mm SiC wafer semiconductor material is used to create high-performance, high-temperature, radiation-resistant, and high-frequency electronic devices. 8inch SiC substrate price is decreasing gradually as the technology becomes more advanced and the demand grows. Recent technology developments lead to production scale manufacturing of 200mm SiC wafers. The main advantages of SiC wafer semiconductor materials in comparison with Si and GaAs wafers: The electric field strength of 4H-SiC during avalanche breakdown is more than an order of magnitude higher than the corresponding values ​​for Si and GaAs. This leads to a significant decrease in the on-state resistivity Ron. Low on-state resistivity, combined with high current density and thermal conductivity, allows the use of very small die for power devices. The high thermal conductivity of SiC reduces the thermal resistance of the chip. The electronic properties of devices based of SiC wafers are very stable over time and on temperature stable, which ensures high reliability of products. Silicon carbide is extremely resistant to hard radiation, which does not degrade the electronic properties of the chip. The high limiting operating temperature of the crystal (more than 6000C) allows you to create highly reliable devices for harsh operating conditions and special applications. At present, we can supply small batch 200mmSiC wafers steadily and continuously and have some stock in the warehouse.

Number	Item	Unit	Production	Research	Dummy
1. Parameters
1.1	polytype	--	4H	4H	4H
1.2	surface orientation	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2. Electrical parameter
2.1	dopant	--	n-type Nitrogen	n-type Nitrogen	n-type Nitrogen
2.2	resistivity	ohm ·cm	0.015~0.025	0.01~0.03	NA
3. Mechanical parameter
3.1	diameter	mm	200±0.2	200±0.2	200±0.2
3.2	thickness	μm	500±25	500±25	500±25
3.3	Notch orientation	°	[1- 100]±5	[1- 100]±5	[1- 100]±5
3.4	Notch Depth	mm	1~1.5	1~1.5	1~1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Bow	μm	-25~25	-45~45	-65~65
3.8	Warp	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4. Stucture
4.1	micropipe density	ea/cm2	≤2	≤10	≤50
4.2	metal content	atoms/cm2	≤1E11	≤1E11	NA
4.3	TSD	ea/cm2	≤500	≤1000	NA
4.4	BPD	ea/cm2	≤2000	≤5000	NA
4.5	TED	ea/cm2	≤7000	≤10000	NA
5. Positive quality
5.1	front	--	Si	Si	Si
5.2	surface finish	--	Si-face CMP	Si-face CMP	Si-face CMP
5.3	particle	ea/wafer	≤100(size≥0.3μm)	NA	NA
5.4	scratch	ea/wafer	≤5,Total Length≤200mm	NA	NA
5.5	Edge chips/indents/cracks/stains/contamination	--	None	None	NA
5.6	Polytype areas	--	None	Area ≤10%	Area ≤30%
5.7	front marking	--	None	None	None
6. Back quality
6.1	back finish	--	C-face MP	C-face MP	C-face MP
6.2	scratch	mm	NA	NA	NA
6.3	Back defects edge chips/indents	--	None	None	NA
6.4	Back roughness	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Back marking	--	Notch	Notch	Notch
7. Edge
7.1	edge	--	Chamfer	Chamfer	Chamfer
8. Package
8.1	packaging	--	Epi-ready with vacuum packaging	Epi-ready with vacuum packaging	Epi-ready with vacuum packaging
8.2	packaging	--	Multi-wafer cassette packaging	Multi-wafer cassette packaging	Multi-wafer cassette packaging