6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade

Get high-quality 6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade from our factory. Shop now!

Request a Quote
  • 6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade
  • 6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade

PRODUCTS DETAILS

The 6-inch silicon carbide single crystal substrate plays a crucial role in multiple industries. Firstly, it is widely used in the semiconductor industry for the fabrication of high-power electronic devices such as power transistors, integrated circuits, and power modules. Its high thermal conductivity and high-temperature resistance enable better heat dissipation, resulting in improved efficiency and reliability. Secondly, silicon carbide wafers are essential in research fields for the development of new materials and devices. Additionally, the silicon carbide wafer finds extensive applications in the field of optoelectronics, including the manufacturing of LEDs and laser diodes. The 6-inch silicon carbide single crystal substrate has a diameter of 6 inches (approximately 152.4 mm). The surface roughness is Ra < 0.5 nm, and the thickness is 600 ± 25 μm. The substrate can be customized with either N-type or P-type conductivity, based on customer requirements. Moreover, it exhibits exceptional mechanical stability, capable of withstanding pressure and vibration.
Diameter 150±2.0mm(6inch)

Thickness

350 μm±25μm

Orientation

On axis : <0001>±0.5°

Off axis:4.0° toward 1120±0.5°

Polytype 4H

Resistivity(Ω·cm)

 4H-N

0.015~0.028 Ω·cm/0.015~0.025ohm·cm

4/6H-SI

>1E5

 Primary flat orientation

{10-10}±5.0°

Primary flat length (mm)

47.5 mm±2.5 mm

Edge

Chamfer

TTV/Bow /Warp (um)

≤15 /≤40 /≤60

AFM Front (Si-face)

Polish Ra≤1 nm

CMP Ra≤0.5 nm

LTV

≤3μm(10mm*10mm)

≤5μm(10mm*10mm)

≤10μm(10mm*10mm)

 TTV

≤5μm

≤10μm

≤15μm

Orange peel/pits/cracks/contamination/stains/striations

None None None

indents

None None None
The 6-inch silicon carbide single crystal substrate is a high-performance material widely used in the semiconductor, research, andoptoelectronics industries. It offers excellent thermal conductivity, mechanical stability, and high-temperature resistance, making itsuitable for the fabrication of high-power electronic devices and new material research. We provide various specifications andcustomization options to meet diverse customer demands. Contact us for more details on silicon carbide wafers!

Hot Products

200mm 8inch GaN on sapphire Epi-layer wafer substrate

200mm 8inch GaN on sapphire Epi-layer wafer substrate

3inch 4 inch 6inch LiNbO3 Wafer Substrate Single crystal material

3inch 4 inch 6inch LiNbO3 Wafer Substrate Single crystal material

KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um

2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um

50.8mm/100mm AlN Template on NPSS/FSS AlN template on sapphire

50.8mm/100mm AlN Template on NPSS/FSS AlN template on sapphire

8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade

8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade

2 inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates

2 inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates

 150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP

150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP

2inch 50.8mm single wafer carrier box of PC and PP

2inch 50.8mm single wafer carrier box of PC and PP

Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP

Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP

Contact us

Please feel free to give your inquiry in the form below We will reply you in 24 hours