4H SiC wafer N-type Diameter: 2 inch 50.8mm | 4 inch 100mm | 6 inch 150mm Orientation: off axis 4.0˚ toward <1120> ± 0.5˚ Resistivity: < 0.1 ohm.cm Roughness: Si-face CMP Ra <0.5nm, C-face optical polish Ra <1 nm 4H SiC wafer Semi-insulating Diameter: 2 inch 50.8mm | 4 inch 100mm | 6 inch 150mm Orientation: on axis {0001} ± 0.25˚ Resistivity: >1E5 ohm.cm Roughness: Si-face CMP Ra <0.5nm, C-face optical polish Ra <1 nm 1. 5G infrastructure -- communication power supply. Communication power supply is the energy base for server and base station communication. It provides electric energy for various transmission equipment to ensure the normal operation of communication system. 2. Charging pile of new energy vehicles -- power module of charging pile. The high efficiency and high power of the charging pile power module can be realized by using silicon carbide in the charging pile power module, so as to improve the charging speed and reduce the charging cost. 3. Big data center, Industrial Internet -- server power supply. The server power supply is the server energy library. The server provides power to ensure the normal operation of the server system. The use of silicon carbide power components in the server power supply can improve the power density and efficiency of the server power supply, reduce the volume of the data center on the whole, reduce the overall construction cost of the data center, and achieve higher environmental efficiency. 4. Uhv - Application of flexible transmission DC circuit breakers. 5. Intercity high-speed rail and intercity rail transit -- traction converters, power electronic transformers, auxiliary converters, auxiliary power supplies.

Properties	unit	Silicon	SiC	GaN
Bandgap width	eV	1.12	3.26	3.41
Breakdown field	MV/cm	0.23	2.2	3.3
Electron mobility	cm^2/Vs	1400	950	1500
Drift valocity	10^7 cm/s	1	2.7	2.5
Thermal conductivity	W/cmK	1.5	3.8	1.3