Applications for 6-inch sapphire wafers include: 1. LED manufacturing: sapphire wafer can be used as the substrate of LED chips, and its hardness and thermal conductivity can improve the stability and service life of LED chips. 2. Laser manufacturing: Sapphire wafer can also be used as the substrate of laser, to help improve the performance of laser and prolong the service life. 3. Semiconductor manufacturing: Sapphire wafers are widely used in the manufacture of electronic and optoelectronic devices, including optical synthesis, solar cells, high-frequency electronic devices, etc. 4. Other applications: Sapphire wafer can also be used to manufacture touch screen, optical devices, thin film solar cells and other high-tech products.

Material	High purity single crystal Al2O3, sapphire wafer.
Dimension	150 mm +/- 0.05 mm, 6 inch
Thickness	1300 +/- 25 um
Orientation	C plane (0001) off M (1-100) plane 0.2 +/- 0.05 degree
Primary flat orientation	A plane +/- 1 degree
Primary flat length	47.5 mm +/- 1 mm
Total Thickness Variation (TTV)	<20 um
Bow	<25 um
Warp	<25 um
Thermal Expansion Coefficient	6.66 x 10-6 / °C parallel to C axis, 5 x 10-6 /°C perpendicular to C axis
Dielectric Strength	4.8 x 105 V/cm
Dielectric Constant	11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis
Dielectric Loss Tangent (a.k.a. dissipation factor)	less than 1 x 10-4
Thermal Conductivity	40 W/(m.K) at 20℃
Polishing	single side polished (SSP) or double side polished (DSP) Ra < 0.5 nm (by AFM). The reverse side of SSP wafer was fine ground to Ra = 0.8 - 1.2 um.
Transmittance	88% +/-1 % @460 nm